| PART |
Description |
Maker |
| OH10004 |
GaAs Hall Device
|
PANASONIC[Panasonic Semiconductor]
|
| OH10003 |
GaAs Hall Device
|
PANASONIC[Panasonic Semiconductor]
|
| OH10010 |
GaAs Hall Device
|
Panasonic Semiconductor
|
| OH10008 |
GaAs Hall Device MAGNETIC FIELD SENSOR-HALL EFFECT, 100-500mT, 0.08-0.13V, SQUARE, SURFACE MOUNT
|
Panasonic, Corp.
PANASONIC[Panasonic Semiconductor]
|
| OH10003 |
GaAs Hall Devices
|
Matsshita / Panasonic
|
| 0899 OH009 |
From old datasheet system
GaAs Hall Devices
|
Matsshita / Panasonic
|
| THP-5A |
Highly reliable Hall Effect device
|
Topstek Inc.
|
| MA4EX1201-1300 MA4EX1201-1300T |
GaAs MMIC Double Balanced 11-15 GHz Mixer GaAs MMIC双平衡混频器11-15千兆
|
Lattice Semiconductor, Corp.
GSI Technology, Inc.
|
| Q62703-Q78 LD260 LD262 LD263 LD264 LD265 LD266 LD2 |
GaAs-IR-Lumineszenzdioden-Zeilen GaAs Infrared Emitter Arrays 砷化镓红外Lumineszenzdioden - Zeilen砷化镓红外发射器阵列
|
SIEMENS AG
Siemens Group
SIEMENS[Siemens Semiconductor Group]
|
| SFH4511 Q62703Q5557 |
GaAs-IR-Lumineszenzdiode GaAs Infrared Emitter Lead (Pb) Free Product - RoHS Compliant
|
OSRAM GmbH
|
